TY - JOUR
T1 - Role of nitrogen in the formation of CN x films by pulsed laser deposition
AU - Wang, Zhiping
AU - Ito, Hiroaki
AU - Masugata, Katsumi
PY - 2012
Y1 - 2012
N2 - Carbon nitride (CN x) films, deposited by pulsed laser deposition (PLD) in nitrogen (N 2) atmosphere, were studied with respect to mechanical, morphological, compositional, structural, and optical properties. All the samples were prepared at room temperature and under various N 2 pressures, ranging from vacuum up to 50 Pa. Nitrogen concentration (C N) rapidly increases with increasing N 2 pressure and reaches to a saturated value above 10 Pa. The Raman results reveal that the D/G ratio increases with the increase in N 2 pressure, contributing the graphitization of carbon films. With further addition of nitrogen into carbon films, optical transmission is enhanced. Localization of the π electrons due to the heteropolar bonding and the high porosity of the CN x samples are speculated to be the reason of enhancement in optical transmission.
AB - Carbon nitride (CN x) films, deposited by pulsed laser deposition (PLD) in nitrogen (N 2) atmosphere, were studied with respect to mechanical, morphological, compositional, structural, and optical properties. All the samples were prepared at room temperature and under various N 2 pressures, ranging from vacuum up to 50 Pa. Nitrogen concentration (C N) rapidly increases with increasing N 2 pressure and reaches to a saturated value above 10 Pa. The Raman results reveal that the D/G ratio increases with the increase in N 2 pressure, contributing the graphitization of carbon films. With further addition of nitrogen into carbon films, optical transmission is enhanced. Localization of the π electrons due to the heteropolar bonding and the high porosity of the CN x samples are speculated to be the reason of enhancement in optical transmission.
KW - Carbon nitride
KW - Nitrogen gas effect
KW - Pulsed laser deposition (PLD)
UR - http://www.scopus.com/inward/record.url?scp=84863727837&partnerID=8YFLogxK
U2 - 10.1109/TPS.2012.2197224
DO - 10.1109/TPS.2012.2197224
M3 - 学術論文
AN - SCOPUS:84863727837
SN - 0093-3813
VL - 40
SP - 1815
EP - 1819
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 7 PART 1
M1 - A9
ER -