抄録
Organic thin-film transistors (OTFTs) with tailored liquid sources of HfO2 as a high-κ insulator were investigated. To investigate the effect of UV irradiation, two types of light source were tested. The contact angles of water and polycrystalline condition of a pentacene were systematically changed and the resultant OTFT characteristics were also changed. The field-effect mobilities and on-off ratios obtained using a high-pressure mercury lamp and a deep-UV lamp as irradiation sources were 0.035 and 0.10 cm2 V-1 s-1, and 24 and 3 × 10 3, respectively.
本文言語 | 英語 |
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論文番号 | 04DK08 |
ジャーナル | Japanese Journal of Applied Physics |
巻 | 49 |
号 | 4 PART 2 |
DOI | |
出版ステータス | 出版済み - 2010/04 |
ASJC Scopus 主題領域
- 工学一般
- 物理学および天文学一般