Organic thin-film transistors with tailored liquid sources of HfO 2 as a high-κ insulator

Ryota Nishizawa; Shigeki Naka; Hiroyuki Okada; Kazuyuki Suzuki; Kazumi Kato

doi:10.1143/JJAP.49.04DK08

Organic thin-film transistors with tailored liquid sources of HfO ₂ as a high-κ insulator

Ryota Nishizawa^*, Shigeki Naka, Hiroyuki Okada, Kazuyuki Suzuki, Kazumi Kato

^*Corresponding author for this work

Electric and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Organic thin-film transistors (OTFTs) with tailored liquid sources of HfO₂ as a high-κ insulator were investigated. To investigate the effect of UV irradiation, two types of light source were tested. The contact angles of water and polycrystalline condition of a pentacene were systematically changed and the resultant OTFT characteristics were also changed. The field-effect mobilities and on-off ratios obtained using a high-pressure mercury lamp and a deep-UV lamp as irradiation sources were 0.035 and 0.10 cm² V^-1 s^-1, and 24 and 3 × 10 ³, respectively.

Original language	English
Article number	04DK08
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DK08
State	Published - 2010/04

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.49.04DK08

Cite this

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title = "Organic thin-film transistors with tailored liquid sources of HfO 2 as a high-κ insulator",

abstract = "Organic thin-film transistors (OTFTs) with tailored liquid sources of HfO2 as a high-κ insulator were investigated. To investigate the effect of UV irradiation, two types of light source were tested. The contact angles of water and polycrystalline condition of a pentacene were systematically changed and the resultant OTFT characteristics were also changed. The field-effect mobilities and on-off ratios obtained using a high-pressure mercury lamp and a deep-UV lamp as irradiation sources were 0.035 and 0.10 cm2 V-1 s-1, and 24 and 3 × 10 3, respectively.",

author = "Ryota Nishizawa and Shigeki Naka and Hiroyuki Okada and Kazuyuki Suzuki and Kazumi Kato",

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T1 - Organic thin-film transistors with tailored liquid sources of HfO 2 as a high-κ insulator

AU - Nishizawa, Ryota

AU - Naka, Shigeki

AU - Okada, Hiroyuki

AU - Suzuki, Kazuyuki

AU - Kato, Kazumi

PY - 2010/4

Y1 - 2010/4

N2 - Organic thin-film transistors (OTFTs) with tailored liquid sources of HfO2 as a high-κ insulator were investigated. To investigate the effect of UV irradiation, two types of light source were tested. The contact angles of water and polycrystalline condition of a pentacene were systematically changed and the resultant OTFT characteristics were also changed. The field-effect mobilities and on-off ratios obtained using a high-pressure mercury lamp and a deep-UV lamp as irradiation sources were 0.035 and 0.10 cm2 V-1 s-1, and 24 and 3 × 10 3, respectively.

AB - Organic thin-film transistors (OTFTs) with tailored liquid sources of HfO2 as a high-κ insulator were investigated. To investigate the effect of UV irradiation, two types of light source were tested. The contact angles of water and polycrystalline condition of a pentacene were systematically changed and the resultant OTFT characteristics were also changed. The field-effect mobilities and on-off ratios obtained using a high-pressure mercury lamp and a deep-UV lamp as irradiation sources were 0.035 and 0.10 cm2 V-1 s-1, and 24 and 3 × 10 3, respectively.

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VL - 49

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

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