抄録
We have carried out the flux flow experiments for two single crystal samples with the residual resistivity ratio RRR = 240 and 12 which differ highly in quality. The peak structure, which is observed in the vicinity of Hc2, is dominant for the RRR = 12 sample, while it is slightly observed for the RRR = 240 sample. The flux flow, however, starts at a low field for the RRR = 12 sample, compared to that for the RRR = 240 sample. It means that a pinning force for the RRR = 12 sample is smaller than that for the RRR = 240 sample. These characteristic features might be closely related to layered defects and Ru-vacancies which exist heavily in the RRR = 12 sample.
本文言語 | 英語 |
---|---|
ページ(範囲) | 688-689 |
ページ数 | 2 |
ジャーナル | Physica B: Condensed Matter |
巻 | 259-261 |
DOI | |
出版ステータス | 出版済み - 1999 |
ASJC Scopus 主題領域
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学