Abstract
We have carried out the flux flow experiments for two single crystal samples with the residual resistivity ratio RRR = 240 and 12 which differ highly in quality. The peak structure, which is observed in the vicinity of Hc2, is dominant for the RRR = 12 sample, while it is slightly observed for the RRR = 240 sample. The flux flow, however, starts at a low field for the RRR = 12 sample, compared to that for the RRR = 240 sample. It means that a pinning force for the RRR = 12 sample is smaller than that for the RRR = 240 sample. These characteristic features might be closely related to layered defects and Ru-vacancies which exist heavily in the RRR = 12 sample.
Original language | English |
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Pages (from-to) | 688-689 |
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 259-261 |
DOIs | |
State | Published - 1999 |
Keywords
- CeRu
- FFLO
- Flux flow
- Peak effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering