TY - JOUR
T1 - Carrier Mobilities in Amorphous Organic Semiconductor Films Prepared at Various Film Formation Processes
AU - Miyashige, Katsuya
AU - Morimoto, Masahiro
AU - Naka, Shigeki
N1 - Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/10
Y1 - 2021/10
N2 - The hole mobility of an organic semiconductor film that consists of N,N’-di (1-naphthyl)-N,N’-diphenyl-benzidine (α-NPD) is evaluated at various film formation processes, such as vacuum deposition and capillary injection. The mobility varies with the film formation process. From the temperature dependence of mobility, the Poole−Frenkel model and disorder model are discussed. From the analysis based on the Poole−Frenkel model, activation energies of the vacuum-deposited film, the slowly cooled-melted film, and the rapidly cooled-melted film are 0.28, 0.20, and 0.40 eV, respectively. This result suggests that organic semiconductor thin films formed by different film formation methods have different molecular aggregation states.
AB - The hole mobility of an organic semiconductor film that consists of N,N’-di (1-naphthyl)-N,N’-diphenyl-benzidine (α-NPD) is evaluated at various film formation processes, such as vacuum deposition and capillary injection. The mobility varies with the film formation process. From the temperature dependence of mobility, the Poole−Frenkel model and disorder model are discussed. From the analysis based on the Poole−Frenkel model, activation energies of the vacuum-deposited film, the slowly cooled-melted film, and the rapidly cooled-melted film are 0.28, 0.20, and 0.40 eV, respectively. This result suggests that organic semiconductor thin films formed by different film formation methods have different molecular aggregation states.
KW - carrier mobilities
KW - organic amorphous semiconductors
KW - temperature dependence
KW - time of flight method
UR - http://www.scopus.com/inward/record.url?scp=85112190800&partnerID=8YFLogxK
U2 - 10.1002/pssa.202100330
DO - 10.1002/pssa.202100330
M3 - 学術論文
AN - SCOPUS:85112190800
SN - 1862-6300
VL - 218
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 19
M1 - 2100330
ER -