Vertical-Type Amorphous-Silicon MOSFET IC’s

Hiroyuki Okada; Yasutaka Uchida; Kazumasa Arai; Shunri Oda; Masakiyo Matsumura

doi:10.1109/16.3345

Vertical-Type Amorphous-Silicon MOSFET IC’s

Hiroyuki Okada, Yasutaka Uchida, Kazumasa Arai, Shunri Oda, Masakiyo Matsumura

工学科　電気電子工学コース

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

12 被引用数 (Scopus)

抄録

The performance of vertical-type amorphous-silicon (a-Si) MOSFET’s has been improved significantly by employing native silicon dioxide as the gate insulator. The maximum field-effect mobility was 1.2 cm2/V ·s. An E/E-type inverter and a seven-stage ring oscillator have been fabricated by integrating the vertical-type a-Si MOSFET. The minimum propagation delay time was 95 ns/stage. The characteristics of an RS flip-flop circuit are also described.

本文言語	英語
ページ（範囲）	919-922
ページ数	4
ジャーナル	IEEE Transactions on Electron Devices
巻	35
号	7
DOI	https://doi.org/10.1109/16.3345
出版ステータス	出版済み - 1988/07

ASJC Scopus 主題領域

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/16.3345

引用スタイル

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AU - Uchida, Yasutaka

AU - Arai, Kazumasa

AU - Oda, Shunri

AU - Matsumura, Masakiyo

PY - 1988/7

Y1 - 1988/7

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Vertical-Type Amorphous-Silicon MOSFET IC’s

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ASJC Scopus 主題領域

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