Vertical-Type Amorphous-Silicon MOSFET IC’s

Hiroyuki Okada; Yasutaka Uchida; Kazumasa Arai; Shunri Oda; Masakiyo Matsumura

doi:10.1109/16.3345

Vertical-Type Amorphous-Silicon MOSFET IC’s

Hiroyuki Okada, Yasutaka Uchida, Kazumasa Arai, Shunri Oda, Masakiyo Matsumura

Electric and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The performance of vertical-type amorphous-silicon (a-Si) MOSFET’s has been improved significantly by employing native silicon dioxide as the gate insulator. The maximum field-effect mobility was 1.2 cm2/V ·s. An E/E-type inverter and a seven-stage ring oscillator have been fabricated by integrating the vertical-type a-Si MOSFET. The minimum propagation delay time was 95 ns/stage. The characteristics of an RS flip-flop circuit are also described.

Original language	English
Pages (from-to)	919-922
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/16.3345
State	Published - 1988/07

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Vertical-Type Amorphous-Silicon MOSFET IC{\textquoteright}s",

abstract = "The performance of vertical-type amorphous-silicon (a-Si) MOSFET{\textquoteright}s has been improved significantly by employing native silicon dioxide as the gate insulator. The maximum field-effect mobility was 1.2 cm2/V ·s. An E/E-type inverter and a seven-stage ring oscillator have been fabricated by integrating the vertical-type a-Si MOSFET. The minimum propagation delay time was 95 ns/stage. The characteristics of an RS flip-flop circuit are also described.",

author = "Hiroyuki Okada and Yasutaka Uchida and Kazumasa Arai and Shunri Oda and Masakiyo Matsumura",

year = "1988",

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T1 - Vertical-Type Amorphous-Silicon MOSFET IC’s

AU - Okada, Hiroyuki

AU - Uchida, Yasutaka

AU - Arai, Kazumasa

AU - Oda, Shunri

AU - Matsumura, Masakiyo

PY - 1988/7

Y1 - 1988/7

N2 - The performance of vertical-type amorphous-silicon (a-Si) MOSFET’s has been improved significantly by employing native silicon dioxide as the gate insulator. The maximum field-effect mobility was 1.2 cm2/V ·s. An E/E-type inverter and a seven-stage ring oscillator have been fabricated by integrating the vertical-type a-Si MOSFET. The minimum propagation delay time was 95 ns/stage. The characteristics of an RS flip-flop circuit are also described.

AB - The performance of vertical-type amorphous-silicon (a-Si) MOSFET’s has been improved significantly by employing native silicon dioxide as the gate insulator. The maximum field-effect mobility was 1.2 cm2/V ·s. An E/E-type inverter and a seven-stage ring oscillator have been fabricated by integrating the vertical-type a-Si MOSFET. The minimum propagation delay time was 95 ns/stage. The characteristics of an RS flip-flop circuit are also described.

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DO - 10.1109/16.3345

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EP - 922

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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Vertical-Type Amorphous-Silicon MOSFET IC’s

Abstract

ASJC Scopus subject areas

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