@inproceedings{50311c92781c4ad198814af8197f93f4,
title = "VERTICAL-TYPE AMORPHOUS-SILICON MOSFET IC'S.",
abstract = "High performance vertical-type amorphous-silicon (a-Si) MOSFET have been demonstrated. Field-effect mobility was 1. 1 cm**2/Vs. A seven-stage E/E type ring oscillator has been fabricated by using the vertical-type a-Si MOSFET. The minimum propagation delay time was 95ns/stage. RS flip-flop circuit was evaluated.",
author = "Hiroyuki Okada and Yasutaka Uchida and Masakazu Arai and Shunri Oda and Masakiyo Matsumura",
year = "1987",
doi = "10.7567/ssdm.1987.a-3-3",
language = "英語",
isbn = "4930813212",
series = "Conference on Solid State Devices and Materials",
publisher = "Japan Soc of Applied Physics",
pages = "51--54",
booktitle = "Conference on Solid State Devices and Materials",
}