Top-gate type oxide semiconductor based self-alignment thin-film transistors using lift-off technique

Fumio Takeda; Shigeki Naka; Hiroyuki Okada

Top-gate type oxide semiconductor based self-alignment thin-film transistors using lift-off technique

Fumio Takeda^*, Shigeki Naka, Hiroyuki Okada

^*この論文の責任著者

工学科　電気電子工学コース

研究成果: 会議への寄与 › 学会論文 › 査読

抄録

Top-gate type oxide-semiconductor based self-alignment thin-film transistors using lift-off technique were investigated. Using lift-off technique, overlapping length between source/drain and gate electrodes was dramatically minimized as 0.25 μm. Obtained field-effect mobility, on-off ratio, threshold voltage were 22 cm²/Vs, 2× 10⁷, and -0.2 V, respectively.

本文言語	英語
ページ	1835-1836
ページ数	2
出版ステータス	出版済み - 2009
イベント	16th International Display Workshops, IDW '09 - Miyazaki, 日本継続期間: 2009/12/09 → 2009/12/11

学会

学会	16th International Display Workshops, IDW '09
国/地域	日本
City	Miyazaki
Period	2009/12/09 → 2009/12/11

ASJC Scopus 主題領域

ハードウェアとアーキテクチャ
人間とコンピュータの相互作用
電子工学および電気工学
電子材料、光学材料、および磁性材料

引用スタイル

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title = "Top-gate type oxide semiconductor based self-alignment thin-film transistors using lift-off technique",

abstract = "Top-gate type oxide-semiconductor based self-alignment thin-film transistors using lift-off technique were investigated. Using lift-off technique, overlapping length between source/drain and gate electrodes was dramatically minimized as 0.25 μm. Obtained field-effect mobility, on-off ratio, threshold voltage were 22 cm2/Vs, 2× 107, and -0.2 V, respectively.",

author = "Fumio Takeda and Shigeki Naka and Hiroyuki Okada",

year = "2009",

language = "英語",

pages = "1835--1836",

note = "16th International Display Workshops, IDW '09 ; Conference date: 09-12-2009 Through 11-12-2009",

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TY - CONF

T1 - Top-gate type oxide semiconductor based self-alignment thin-film transistors using lift-off technique

AU - Takeda, Fumio

AU - Naka, Shigeki

AU - Okada, Hiroyuki

PY - 2009

Y1 - 2009

N2 - Top-gate type oxide-semiconductor based self-alignment thin-film transistors using lift-off technique were investigated. Using lift-off technique, overlapping length between source/drain and gate electrodes was dramatically minimized as 0.25 μm. Obtained field-effect mobility, on-off ratio, threshold voltage were 22 cm2/Vs, 2× 107, and -0.2 V, respectively.

AB - Top-gate type oxide-semiconductor based self-alignment thin-film transistors using lift-off technique were investigated. Using lift-off technique, overlapping length between source/drain and gate electrodes was dramatically minimized as 0.25 μm. Obtained field-effect mobility, on-off ratio, threshold voltage were 22 cm2/Vs, 2× 107, and -0.2 V, respectively.

UR - http://www.scopus.com/inward/record.url?scp=77954171549&partnerID=8YFLogxK

M3 - 学会論文

AN - SCOPUS:77954171549

SP - 1835

EP - 1836

T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Top-gate type oxide semiconductor based self-alignment thin-film transistors using lift-off technique

抄録

学会

ASJC Scopus 主題領域

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引用スタイル