The semiconductor-metal transition of liquid arsenic-selenium mixtures at high temperatures and high pressures

Hideoki Hoshino*, Takafumi Miyanaga, Hiroyuki Ikemoto, Shinya Hosokawa, Hirohisa Endo

*この論文の責任著者

研究成果: ジャーナルへの寄稿学術論文査読

14 被引用数 (Scopus)

抄録

The electrical conductivity σ and thermoelectric power S of liquid As-Se mixtures (up to 40 at.% As) have been measured at high temperatures (up to 1500°C) and high pressures (up to 1200 bar). For these mixtures, broad maxima appear in both the (∂ In σ/∂P)T versus T and the (-∂In S/∂P)T versus T curves. The maximum temperature Tmax at which these maxima occur decreases monotonically up to 30 at.% As. Around Tmax the semiconductor-metal transition occurs, which is enhanced by applying pressure. It was found that Tmax increases as the As concentration changes from 30 to 40 at.% As. The results of EXAFS suggest a substantial change in the local atomic configuration around As atoms for 30 at.% As.

本文言語英語
ページ(範囲)43-47
ページ数5
ジャーナルJournal of Non-Crystalline Solids
205-207
1
DOI
出版ステータス出版済み - 1996/10

ASJC Scopus 主題領域

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 凝縮系物理学
  • 材料化学

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