The semiconductor-metal transition of liquid arsenic-selenium mixtures at high temperatures and high pressures

Hideoki Hoshino; Takafumi Miyanaga; Hiroyuki Ikemoto; Shinya Hosokawa; Hirohisa Endo

doi:10.1016/S0022-3093(96)00212-8

The semiconductor-metal transition of liquid arsenic-selenium mixtures at high temperatures and high pressures

Hideoki Hoshino^*, Takafumi Miyanaga, Hiroyuki Ikemoto, Shinya Hosokawa, Hirohisa Endo

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The electrical conductivity σ and thermoelectric power S of liquid As-Se mixtures (up to 40 at.% As) have been measured at high temperatures (up to 1500°C) and high pressures (up to 1200 bar). For these mixtures, broad maxima appear in both the (∂ In σ/∂P)T versus T and the (-∂In S/∂P)T versus T curves. The maximum temperature T_max at which these maxima occur decreases monotonically up to 30 at.% As. Around T_max the semiconductor-metal transition occurs, which is enhanced by applying pressure. It was found that T_max increases as the As concentration changes from 30 to 40 at.% As. The results of EXAFS suggest a substantial change in the local atomic configuration around As atoms for 30 at.% As.

Original language	English
Pages (from-to)	43-47
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	205-207
Issue number	1
DOIs	https://doi.org/10.1016/S0022-3093(96)00212-8
State	Published - 1996/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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title = "The semiconductor-metal transition of liquid arsenic-selenium mixtures at high temperatures and high pressures",

abstract = "The electrical conductivity σ and thermoelectric power S of liquid As-Se mixtures (up to 40 at.% As) have been measured at high temperatures (up to 1500°C) and high pressures (up to 1200 bar). For these mixtures, broad maxima appear in both the (∂ In σ/∂P)T versus T and the (-∂In S/∂P)T versus T curves. The maximum temperature Tmax at which these maxima occur decreases monotonically up to 30 at.% As. Around Tmax the semiconductor-metal transition occurs, which is enhanced by applying pressure. It was found that Tmax increases as the As concentration changes from 30 to 40 at.% As. The results of EXAFS suggest a substantial change in the local atomic configuration around As atoms for 30 at.% As.",

author = "Hideoki Hoshino and Takafumi Miyanaga and Hiroyuki Ikemoto and Shinya Hosokawa and Hirohisa Endo",

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T1 - The semiconductor-metal transition of liquid arsenic-selenium mixtures at high temperatures and high pressures

AU - Hoshino, Hideoki

AU - Miyanaga, Takafumi

AU - Ikemoto, Hiroyuki

AU - Hosokawa, Shinya

AU - Endo, Hirohisa

PY - 1996/10

Y1 - 1996/10

N2 - The electrical conductivity σ and thermoelectric power S of liquid As-Se mixtures (up to 40 at.% As) have been measured at high temperatures (up to 1500°C) and high pressures (up to 1200 bar). For these mixtures, broad maxima appear in both the (∂ In σ/∂P)T versus T and the (-∂In S/∂P)T versus T curves. The maximum temperature Tmax at which these maxima occur decreases monotonically up to 30 at.% As. Around Tmax the semiconductor-metal transition occurs, which is enhanced by applying pressure. It was found that Tmax increases as the As concentration changes from 30 to 40 at.% As. The results of EXAFS suggest a substantial change in the local atomic configuration around As atoms for 30 at.% As.

AB - The electrical conductivity σ and thermoelectric power S of liquid As-Se mixtures (up to 40 at.% As) have been measured at high temperatures (up to 1500°C) and high pressures (up to 1200 bar). For these mixtures, broad maxima appear in both the (∂ In σ/∂P)T versus T and the (-∂In S/∂P)T versus T curves. The maximum temperature Tmax at which these maxima occur decreases monotonically up to 30 at.% As. Around Tmax the semiconductor-metal transition occurs, which is enhanced by applying pressure. It was found that Tmax increases as the As concentration changes from 30 to 40 at.% As. The results of EXAFS suggest a substantial change in the local atomic configuration around As atoms for 30 at.% As.

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The semiconductor-metal transition of liquid arsenic-selenium mixtures at high temperatures and high pressures

Abstract

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