Study of Interactions of Slow Highly Charged Bismuth Ions with ZnO Nanorods

We present physical properties of ZnO nanorods irradiated with slow highly charged Bismuth (Bi⁷⁴⁺) ions of different fluences. Samples were grown on Si substrates by hydrothermal technique at 90 °C and were found to be randomly distributed. Room temperature Raman measurements showed the decrease and the blue shift of (Formula presented.) mode of irradiated samples, suggesting the suppression of crystallinity and the growth of stress. Signature of dynamic annealing (defect-annihilation) of radiation defects at higher doses was observed. Room temperature photoluminescence studies showed similar features in two regions: ultraviolet and broad visible regions. Both regions were unaffected with increased ion fluences. UV emission was found to be related to the FX-2LO transition and visible emission to the intrinsic defects of the samples. X-ray emissions detected in ion-surface interactions confirmed the formation and the decay of hollow Bi atoms during their approach to the sample surface.