Radiation hardening of silicon strip detectors

S. Yoshida; T. Ohsugi; Y. Fukazawa; K. Yamamura; K. Yamamoto; K. Sato

doi:10.1016/j.nima.2003.08.081

Radiation hardening of silicon strip detectors

S. Yoshida^*, T. Ohsugi, Y. Fukazawa, K. Yamamura, K. Yamamoto, K. Sato

^*この論文の責任著者

教養教育学系

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

3 被引用数 (Scopus)

抄録

We introduce two methods to reduce the surface radiation damage of silicon strip detectors. The microscopic reason of surface radiation damage is mainly due to the generation of radiation induced interface traps. The interface traps formation occurs as a result of a series of processes initiated by the creation of electron-hole pairs in SiO₂ layer and the subsequent transport of the holes to the SiO₂/Si interface. To prevent the transport of holes to the SiO₂/Si interface, we tried two different methods. The leakage current after irradiation decreased by 26% and 67% using these methods.

本文言語	英語
ページ（範囲）	38-43
ページ数	6
ジャーナル	Nuclear Inst. and Methods in Physics Research, A
巻	514
号	1-3
DOI	https://doi.org/10.1016/j.nima.2003.08.081
出版ステータス	出版済み - 2003/11/21
イベント	Proceedings of the 4th International Conference on Radiation (RESMDDo2) - 継続期間: 2002/07/10 → 2002/07/12

ASJC Scopus 主題領域

核物理学および高エネルギー物理学
器械工学

文献へのアクセス

10.1016/j.nima.2003.08.081

引用スタイル

@article{d4a8a2444c0741338f6266adbe10418c,

title = "Radiation hardening of silicon strip detectors",

abstract = "We introduce two methods to reduce the surface radiation damage of silicon strip detectors. The microscopic reason of surface radiation damage is mainly due to the generation of radiation induced interface traps. The interface traps formation occurs as a result of a series of processes initiated by the creation of electron-hole pairs in SiO2 layer and the subsequent transport of the holes to the SiO2/Si interface. To prevent the transport of holes to the SiO2/Si interface, we tried two different methods. The leakage current after irradiation decreased by 26% and 67% using these methods.",

keywords = "GLAST, Radiation damage, Radiation hardening, Silicon strip detector, Surface radiation damage",

author = "S. Yoshida and T. Ohsugi and Y. Fukazawa and K. Yamamura and K. Yamamoto and K. Sato",

year = "2003",

month = nov,

day = "21",

doi = "10.1016/j.nima.2003.08.081",

language = "英語",

volume = "514",

pages = "38--43",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

publisher = "Elsevier B.V.",

number = "1-3",

note = "Proceedings of the 4th International Conference on Radiation (RESMDDo2) ; Conference date: 10-07-2002 Through 12-07-2002",

}

TY - JOUR

T1 - Radiation hardening of silicon strip detectors

AU - Yoshida, S.

AU - Ohsugi, T.

AU - Fukazawa, Y.

AU - Yamamura, K.

AU - Yamamoto, K.

AU - Sato, K.

PY - 2003/11/21

Y1 - 2003/11/21

N2 - We introduce two methods to reduce the surface radiation damage of silicon strip detectors. The microscopic reason of surface radiation damage is mainly due to the generation of radiation induced interface traps. The interface traps formation occurs as a result of a series of processes initiated by the creation of electron-hole pairs in SiO2 layer and the subsequent transport of the holes to the SiO2/Si interface. To prevent the transport of holes to the SiO2/Si interface, we tried two different methods. The leakage current after irradiation decreased by 26% and 67% using these methods.

AB - We introduce two methods to reduce the surface radiation damage of silicon strip detectors. The microscopic reason of surface radiation damage is mainly due to the generation of radiation induced interface traps. The interface traps formation occurs as a result of a series of processes initiated by the creation of electron-hole pairs in SiO2 layer and the subsequent transport of the holes to the SiO2/Si interface. To prevent the transport of holes to the SiO2/Si interface, we tried two different methods. The leakage current after irradiation decreased by 26% and 67% using these methods.

KW - GLAST

KW - Radiation damage

KW - Radiation hardening

KW - Silicon strip detector

KW - Surface radiation damage

UR - http://www.scopus.com/inward/record.url?scp=0242691888&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2003.08.081

DO - 10.1016/j.nima.2003.08.081

M3 - 会議記事

AN - SCOPUS:0242691888

SN - 0168-9002

VL - 514

SP - 38

EP - 43

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1-3

T2 - Proceedings of the 4th International Conference on Radiation (RESMDDo2)

Y2 - 10 July 2002 through 12 July 2002

ER -

Radiation hardening of silicon strip detectors

抄録

ASJC Scopus 主題領域

文献へのアクセス

フィンガープリント

引用スタイル