抄録
Quasi-nor rmally-off AlGaN/GaN HEMTs have been fabricated by fluoride-based plasma treatment. SIMS measurement showed an incorporation of fluorine atoms in the AlGaN barrier layer. In the capacitance DLTS measurements of the n-AlGaN, a new peak with an activation energy of 1.51 eV appeared for the sample with fluoride-plasma treatment. The threshold voltage did not change for the thermal stability test at 200 °C for more than 80 days.
| 本文言語 | 英語 |
|---|---|
| ページ（範囲） | 2732-2735 |
| ページ数 | 4 |
| ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 巻 | 4 |
| 号 | 7 |
| DOI | |
| 出版ステータス | 出版済み - 2007 |
| イベント | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, 日本 継続期間: 2006/10/22 → 2006/10/27 |
ASJC Scopus 主題領域
- 凝縮系物理学