Abstract
Quasi-nor rmally-off AlGaN/GaN HEMTs have been fabricated by fluoride-based plasma treatment. SIMS measurement showed an incorporation of fluorine atoms in the AlGaN barrier layer. In the capacitance DLTS measurements of the n-AlGaN, a new peak with an activation energy of 1.51 eV appeared for the sample with fluoride-plasma treatment. The threshold voltage did not change for the thermal stability test at 200 °C for more than 80 days.
| Original language | English |
|---|---|
| Pages (from-to) | 2732-2735 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 4 |
| Issue number | 7 |
| DOIs | |
| State | Published - 2007 |
| Event | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006/10/22 → 2006/10/27 |
ASJC Scopus subject areas
- Condensed Matter Physics