MOS sine function generator using exponential-law technique

O. Ishizuka; Z. Tang; D. Matsumoto

doi:10.1049/el:19911202

MOS sine function generator using exponential-law technique

O. Ishizuka, Z. Tang, D. Matsumoto

工学科　知能情報工学コース

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

17 被引用数 (Scopus)

抄録

A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponentiallaw of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0·71% over an angular range of ±360°. Typical power consumption is less than 1 μW and the bandwidth is greater than 100 kHz.

本文言語	英語
ページ（範囲）	1937-1939
ページ数	3
ジャーナル	Electronics Letters
巻	27
号	21
DOI	https://doi.org/10.1049/el:19911202
出版ステータス	出版済み - 1991/10/10

ASJC Scopus 主題領域

電子工学および電気工学

文献へのアクセス

10.1049/el:19911202

引用スタイル

@article{c0431124628c424dad20bb7acbf5734f,

title = "MOS sine function generator using exponential-law technique",

abstract = "A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponentiallaw of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0·71% over an angular range of ±360°. Typical power consumption is less than 1 μW and the bandwidth is greater than 100 kHz.",

keywords = "Circuit theory and design, Function generators, Metaloxidesemiconductor structures and devices",

author = "O. Ishizuka and Z. Tang and D. Matsumoto",

year = "1991",

month = oct,

day = "10",

doi = "10.1049/el:19911202",

language = "英語",

volume = "27",

pages = "1937--1939",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "21",

}

TY - JOUR

T1 - MOS sine function generator using exponential-law technique

AU - Ishizuka, O.

AU - Tang, Z.

AU - Matsumoto, D.

PY - 1991/10/10

Y1 - 1991/10/10

N2 - A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponentiallaw of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0·71% over an angular range of ±360°. Typical power consumption is less than 1 μW and the bandwidth is greater than 100 kHz.

AB - A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponentiallaw of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0·71% over an angular range of ±360°. Typical power consumption is less than 1 μW and the bandwidth is greater than 100 kHz.

KW - Circuit theory and design

KW - Function generators

KW - Metaloxidesemiconductor structures and devices

UR - http://www.scopus.com/inward/record.url?scp=0026243761&partnerID=8YFLogxK

U2 - 10.1049/el:19911202

DO - 10.1049/el:19911202

M3 - 学術論文

AN - SCOPUS:0026243761

SN - 0013-5194

VL - 27

SP - 1937

EP - 1939

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

MOS sine function generator using exponential-law technique

抄録

ASJC Scopus 主題領域

文献へのアクセス

フィンガープリント

引用スタイル