MOS sine function generator using exponential-law technique

O. Ishizuka; Z. Tang; D. Matsumoto

doi:10.1049/el:19911202

MOS sine function generator using exponential-law technique

O. Ishizuka, Z. Tang, D. Matsumoto

Intellectual Information Engineering

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17 Scopus citations

Abstract

A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponentiallaw of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0·71% over an angular range of ±360°. Typical power consumption is less than 1 μW and the bandwidth is greater than 100 kHz.

Original language	English
Pages (from-to)	1937-1939
Number of pages	3
Journal	Electronics Letters
Volume	27
Issue number	21
DOIs	https://doi.org/10.1049/el:19911202
State	Published - 1991/10/10

Keywords

Circuit theory and design
Function generators
Metaloxidesemiconductor structures and devices

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19911202

Cite this

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title = "MOS sine function generator using exponential-law technique",

abstract = "A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponentiallaw of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0·71% over an angular range of ±360°. Typical power consumption is less than 1 μW and the bandwidth is greater than 100 kHz.",

keywords = "Circuit theory and design, Function generators, Metaloxidesemiconductor structures and devices",

author = "O. Ishizuka and Z. Tang and D. Matsumoto",

year = "1991",

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day = "10",

doi = "10.1049/el:19911202",

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N2 - A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponentiallaw of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0·71% over an angular range of ±360°. Typical power consumption is less than 1 μW and the bandwidth is greater than 100 kHz.

AB - A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponentiallaw of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0·71% over an angular range of ±360°. Typical power consumption is less than 1 μW and the bandwidth is greater than 100 kHz.

KW - Circuit theory and design

KW - Function generators

KW - Metaloxidesemiconductor structures and devices

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M3 - 学術論文

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JO - Electronics Letters

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MOS sine function generator using exponential-law technique

Abstract

Keywords

ASJC Scopus subject areas

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