Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface

T. Kato; M. Uchibe; H. Tochihara; W. Shimada

doi:10.1016/S0039-6028(99)00169-7

Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface

T. Kato^*, M. Uchibe, H. Tochihara, W. Shimada

^*この論文の責任著者

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

4 被引用数 (Scopus)

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The growth patterns of the Si(111)-(7 × 7) structure (DAS structure) on the quenched surface are calculated using Monte-Carlo simulation. The model Hamiltonian, which was constructed in terms of the states of each 7 × 7 triangular half, based on an assumption of one-by-one formation of faulted halves in the previous paper, is employed. In the simulation the out-of-phase effect for growth is taken into account. Calculated patterns of the DAS domain growth reproduce the characteristic features of the observed patterns for growths on the terrace, from the F- and U-steps, respectively.

本文言語	英語
ページ（範囲）	745-750
ページ数	6
ジャーナル	Surface Science
巻	433
DOI	https://doi.org/10.1016/S0039-6028(99)00169-7
出版ステータス	出版済み - 1999/08/02
イベント	Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) - Birmingham, UK 継続期間: 1998/08/31 → 1998/09/04

ASJC Scopus 主題領域

凝縮系物理学
表面および界面
表面、皮膜および薄膜
材料化学

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10.1016/S0039-6028(99)00169-7

引用スタイル

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title = "Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface",

abstract = "The growth patterns of the Si(111)-(7 × 7) structure (DAS structure) on the quenched surface are calculated using Monte-Carlo simulation. The model Hamiltonian, which was constructed in terms of the states of each 7 × 7 triangular half, based on an assumption of one-by-one formation of faulted halves in the previous paper, is employed. In the simulation the out-of-phase effect for growth is taken into account. Calculated patterns of the DAS domain growth reproduce the characteristic features of the observed patterns for growths on the terrace, from the F- and U-steps, respectively.",

author = "T. Kato and M. Uchibe and H. Tochihara and W. Shimada",

year = "1999",

month = aug,

day = "2",

doi = "10.1016/S0039-6028(99)00169-7",

language = "英語",

volume = "433",

pages = "745--750",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

note = "Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) ; Conference date: 31-08-1998 Through 04-09-1998",

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TY - JOUR

T1 - Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface

AU - Kato, T.

AU - Uchibe, M.

AU - Tochihara, H.

AU - Shimada, W.

PY - 1999/8/2

Y1 - 1999/8/2

N2 - The growth patterns of the Si(111)-(7 × 7) structure (DAS structure) on the quenched surface are calculated using Monte-Carlo simulation. The model Hamiltonian, which was constructed in terms of the states of each 7 × 7 triangular half, based on an assumption of one-by-one formation of faulted halves in the previous paper, is employed. In the simulation the out-of-phase effect for growth is taken into account. Calculated patterns of the DAS domain growth reproduce the characteristic features of the observed patterns for growths on the terrace, from the F- and U-steps, respectively.

AB - The growth patterns of the Si(111)-(7 × 7) structure (DAS structure) on the quenched surface are calculated using Monte-Carlo simulation. The model Hamiltonian, which was constructed in terms of the states of each 7 × 7 triangular half, based on an assumption of one-by-one formation of faulted halves in the previous paper, is employed. In the simulation the out-of-phase effect for growth is taken into account. Calculated patterns of the DAS domain growth reproduce the characteristic features of the observed patterns for growths on the terrace, from the F- and U-steps, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0033329443&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(99)00169-7

DO - 10.1016/S0039-6028(99)00169-7

M3 - 学術論文

SN - 0039-6028

VL - 433

SP - 745

EP - 750

JO - Surface Science

JF - Surface Science

T2 - Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10)

Y2 - 31 August 1998 through 4 September 1998

ER -

Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface

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