Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface

T. Kato; M. Uchibe; H. Tochihara; W. Shimada

doi:10.1016/S0039-6028(99)00169-7

Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface

T. Kato^*, M. Uchibe, H. Tochihara, W. Shimada

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The growth patterns of the Si(111)-(7 × 7) structure (DAS structure) on the quenched surface are calculated using Monte-Carlo simulation. The model Hamiltonian, which was constructed in terms of the states of each 7 × 7 triangular half, based on an assumption of one-by-one formation of faulted halves in the previous paper, is employed. In the simulation the out-of-phase effect for growth is taken into account. Calculated patterns of the DAS domain growth reproduce the characteristic features of the observed patterns for growths on the terrace, from the F- and U-steps, respectively.

Original language	English
Pages (from-to)	745-750
Number of pages	6
Journal	Surface Science
Volume	433
DOIs	https://doi.org/10.1016/S0039-6028(99)00169-7
State	Published - 1999/08/02
Event	Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) - Birmingham, UK Duration: 1998/08/31 → 1998/09/04

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(99)00169-7

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title = "Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface",

abstract = "The growth patterns of the Si(111)-(7 × 7) structure (DAS structure) on the quenched surface are calculated using Monte-Carlo simulation. The model Hamiltonian, which was constructed in terms of the states of each 7 × 7 triangular half, based on an assumption of one-by-one formation of faulted halves in the previous paper, is employed. In the simulation the out-of-phase effect for growth is taken into account. Calculated patterns of the DAS domain growth reproduce the characteristic features of the observed patterns for growths on the terrace, from the F- and U-steps, respectively.",

author = "T. Kato and M. Uchibe and H. Tochihara and W. Shimada",

year = "1999",

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doi = "10.1016/S0039-6028(99)00169-7",

language = "英語",

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pages = "745--750",

journal = "Surface Science",

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publisher = "Elsevier B.V.",

note = "Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) ; Conference date: 31-08-1998 Through 04-09-1998",

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TY - JOUR

T1 - Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface

AU - Kato, T.

AU - Uchibe, M.

AU - Tochihara, H.

AU - Shimada, W.

PY - 1999/8/2

Y1 - 1999/8/2

N2 - The growth patterns of the Si(111)-(7 × 7) structure (DAS structure) on the quenched surface are calculated using Monte-Carlo simulation. The model Hamiltonian, which was constructed in terms of the states of each 7 × 7 triangular half, based on an assumption of one-by-one formation of faulted halves in the previous paper, is employed. In the simulation the out-of-phase effect for growth is taken into account. Calculated patterns of the DAS domain growth reproduce the characteristic features of the observed patterns for growths on the terrace, from the F- and U-steps, respectively.

AB - The growth patterns of the Si(111)-(7 × 7) structure (DAS structure) on the quenched surface are calculated using Monte-Carlo simulation. The model Hamiltonian, which was constructed in terms of the states of each 7 × 7 triangular half, based on an assumption of one-by-one formation of faulted halves in the previous paper, is employed. In the simulation the out-of-phase effect for growth is taken into account. Calculated patterns of the DAS domain growth reproduce the characteristic features of the observed patterns for growths on the terrace, from the F- and U-steps, respectively.

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U2 - 10.1016/S0039-6028(99)00169-7

DO - 10.1016/S0039-6028(99)00169-7

M3 - 学術論文

SN - 0039-6028

VL - 433

SP - 745

EP - 750

JO - Surface Science

JF - Surface Science

T2 - Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10)

Y2 - 31 August 1998 through 4 September 1998

ER -

Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface

Abstract

ASJC Scopus subject areas

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