TY - JOUR
T1 - Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer
AU - Mori, M.
AU - Fujimoto, N.
AU - Akae, N.
AU - Uotani, K.
AU - Tambo, T.
AU - Tatsuyama, C.
PY - 2006/1/15
Y1 - 2006/1/15
N2 - The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 °C. The two-step growth procedure was also used to further improve the crystal quality of the films.
AB - The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 °C. The two-step growth procedure was also used to further improve the crystal quality of the films.
KW - A1. Atomic force microscopy
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting materials
UR - http://www.scopus.com/inward/record.url?scp=29344450150&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2005.10.011
DO - 10.1016/j.jcrysgro.2005.10.011
M3 - 学術論文
AN - SCOPUS:29344450150
SN - 0022-0248
VL - 286
SP - 218
EP - 222
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2
ER -