Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

M. Mori; N. Fujimoto; N. Akae; K. Uotani; T. Tambo; C. Tatsuyama

doi:10.1016/j.jcrysgro.2005.10.011

Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

M. Mori^*, N. Fujimoto, N. Akae, K. Uotani, T. Tambo, C. Tatsuyama

^*Corresponding author for this work

Electric and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 °C. The two-step growth procedure was also used to further improve the crystal quality of the films.

Original language	English
Pages (from-to)	218-222
Number of pages	5
Journal	Journal of Crystal Growth
Volume	286
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.011
State	Published - 2006/01/15

Keywords

A1. Atomic force microscopy
A1. X-ray diffraction
A3. Molecular beam epitaxy
B2. Semiconducting materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.10.011

Cite this

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title = "Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer",

abstract = "The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 °C. The two-step growth procedure was also used to further improve the crystal quality of the films.",

keywords = "A1. Atomic force microscopy, A1. X-ray diffraction, A3. Molecular beam epitaxy, B2. Semiconducting materials",

author = "M. Mori and N. Fujimoto and N. Akae and K. Uotani and T. Tambo and C. Tatsuyama",

year = "2006",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2005.10.011",

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TY - JOUR

T1 - Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

AU - Mori, M.

AU - Fujimoto, N.

AU - Akae, N.

AU - Uotani, K.

AU - Tambo, T.

AU - Tatsuyama, C.

PY - 2006/1/15

Y1 - 2006/1/15

N2 - The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 °C. The two-step growth procedure was also used to further improve the crystal quality of the films.

AB - The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 °C. The two-step growth procedure was also used to further improve the crystal quality of the films.

KW - A1. Atomic force microscopy

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting materials

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U2 - 10.1016/j.jcrysgro.2005.10.011

DO - 10.1016/j.jcrysgro.2005.10.011

M3 - 学術論文

AN - SCOPUS:29344450150

SN - 0022-0248

VL - 286

SP - 218

EP - 222

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

Abstract

Keywords

ASJC Scopus subject areas

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