Heteroepitaxial growth of a rotated AlInSb layer mediated by an InSb bi-layer on a Si(111) substrate

Keyphrases

• InSb 100%
• Heteroepitaxial Growth 100%
• Si(111) Substrate 100%
• AlInAsSb 100%
• Si Substrate 50%
• X Ray Diffraction 25%
• In Situ 25%
• Buffer Layer 25%
• Composition Ratio 25%
• Two-step Growth 25%
• Reflection High-energy Electron Diffraction 25%
• Lattice Mismatch 25%
• Epitaxial 25%
• Molecular Beam Epitaxy 25%
• Sb Layers 25%

Material Science

• Film 100%
• X-Ray Diffraction 50%
• Buffer Layer 50%
• Reflection High-Energy Electron Diffraction 50%
• Lattice Mismatch 50%
• Molecular Beam Epitaxy 50%
• Phase Composition 50%