TY - JOUR
T1 - Heteroepitaxial growth of a rotated AlInSb layer mediated by an InSb bi-layer on a Si(111) substrate
AU - Saito, Mitsufumi
AU - Mori, Masayuki
AU - Ueda, Koji
AU - Maezawa, Koichi
PY - 2009
Y1 - 2009
N2 - Two-step growth of an AlInSb film mediated by an InSb bilayer on a Si(111) substrate was performed in a molecular beam epitaxy (MBE) chamber. The growth was observed by in situ reflection high energy electron diffraction. After the deposition, the samples were characterized by X-ray diffraction (XRD). It is confirmed that the grown AlInSb films were rotated by 30° with respect to the Si substrates. The lattice mismatch between the AlInSb and the Si substrate was reduced by the rotation. Using this method, epitaxial AlyIn(1-y) Sb layers which have the composition ratio y of 0.22-0.65 can be achieved without thick buffer layers.
AB - Two-step growth of an AlInSb film mediated by an InSb bilayer on a Si(111) substrate was performed in a molecular beam epitaxy (MBE) chamber. The growth was observed by in situ reflection high energy electron diffraction. After the deposition, the samples were characterized by X-ray diffraction (XRD). It is confirmed that the grown AlInSb films were rotated by 30° with respect to the Si substrates. The lattice mismatch between the AlInSb and the Si substrate was reduced by the rotation. Using this method, epitaxial AlyIn(1-y) Sb layers which have the composition ratio y of 0.22-0.65 can be achieved without thick buffer layers.
UR - http://www.scopus.com/inward/record.url?scp=70349410554&partnerID=8YFLogxK
U2 - 10.1002/pssc.200881528
DO - 10.1002/pssc.200881528
M3 - 会議記事
AN - SCOPUS:70349410554
SN - 1862-6351
VL - 6
SP - 1497
EP - 1500
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 6
T2 - 35th International Symposium on Compound Semiconductors, ISCS 2008
Y2 - 21 September 2008 through 24 September 2008
ER -