Heteroepitaxial growth of a rotated AlInSb layer mediated by an InSb bi-layer on a Si(111) substrate

Two-step growth of an AlInSb film mediated by an InSb bilayer on a Si(111) substrate was performed in a molecular beam epitaxy (MBE) chamber. The growth was observed by in situ reflection high energy electron diffraction. After the deposition, the samples were characterized by X-ray diffraction (XRD). It is confirmed that the grown AlInSb films were rotated by 30° with respect to the Si substrates. The lattice mismatch between the AlInSb and the Si substrate was reduced by the rotation. Using this method, epitaxial Al_yIn(1-y) Sb layers which have the composition ratio y of 0.22-0.65 can be achieved without thick buffer layers.