抄録
Cr-Si metastable alloys were prepared by RF sputtering in a low-pressure argon gas. The structure of sputtered alloys results in Cr (Si) solid solution, Cr+Cr3Si, the amorphous phase with increasing Si content for Cr-Si alloys. The dissolution hardening effect of Si increases the microhardness of Cr(Si) solid solution. The microhardness of Cr-Si sputtered alloys yields the peak around 50 at% Si, and furthermore, the microhardness of Cr-Si alloy, with Si rich content of 80at% or more increases with Si content. These results suggest that the bonding character of Cr-Si amorphous alloys is different from the metallic-to-covalent bonding of Si-rich alloys. This bonding character difference for Cr-Si rich alloys is also seen in the Si content dependence of the crystallization temperatures for Cr-Si alloys.
本文言語 | 英語 |
---|---|
ページ(範囲) | 503-507 |
ページ数 | 5 |
ジャーナル | Vacuum |
巻 | 65 |
号 | 3-4 |
DOI | |
出版ステータス | 出版済み - 2002/05/27 |
イベント | 3th International Symposium on Applied Plasma Science - Fairbanks, AK, 米国 継続期間: 2001/07/02 → 2001/07/06 |
ASJC Scopus 主題領域
- 器械工学
- 凝縮系物理学
- 表面、皮膜および薄膜