Elastic property of Kondo semiconductor CeOs4Sb12

Yoshiki Nakanishi; Masafumi Oikawa; Tomoyuki Kumagai; Masahito Yoshizawa; Takahiro Namiki; Hitoshi Sugawara; Hideyuki Sato

doi:10.1016/j.physb.2005.01.259

Elastic property of Kondo semiconductor CeOs₄Sb₁₂

Yoshiki Nakanishi^*, Masafumi Oikawa, Tomoyuki Kumagai, Masahito Yoshizawa, Takahiro Namiki, Hitoshi Sugawara, Hideyuki Sato

^*この論文の責任著者

材料デザイン工学科

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

4 被引用数 (Scopus)

抄録

Ultrasonic measurement was performed on Kondo semiconductor CeOs ₄Sb₁₂ to investigate the elastic property. A distinct elastic softening toward low temperatures was observed in C11, whereas no softening was observed in C44. The obtained results were not explained reasonably based on the crystalline electric field effect, indicating that the softening is ascribed to another origin. Since CeOs₄Sb₁₂ is likely to form the narrow quasiparticle band, the coupling between elastic strain and the band may play a crucial role. We discuss the origin of the distinct softening in C11 from the view of this coupling.

本文言語	英語
ページ（範囲）	907-909
ページ数	3
ジャーナル	Physica B: Condensed Matter
巻	359-361
号	SPEC. ISS.
DOI	https://doi.org/10.1016/j.physb.2005.01.259
出版ステータス	出版済み - 2005/04/30

ASJC Scopus 主題領域

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1016/j.physb.2005.01.259

引用スタイル

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title = "Elastic property of Kondo semiconductor CeOs4Sb12",

abstract = "Ultrasonic measurement was performed on Kondo semiconductor CeOs 4Sb12 to investigate the elastic property. A distinct elastic softening toward low temperatures was observed in C11, whereas no softening was observed in C44. The obtained results were not explained reasonably based on the crystalline electric field effect, indicating that the softening is ascribed to another origin. Since CeOs4Sb12 is likely to form the narrow quasiparticle band, the coupling between elastic strain and the band may play a crucial role. We discuss the origin of the distinct softening in C11 from the view of this coupling.",

keywords = "Deformation potential approximation, Elastic property",

author = "Yoshiki Nakanishi and Masafumi Oikawa and Tomoyuki Kumagai and Masahito Yoshizawa and Takahiro Namiki and Hitoshi Sugawara and Hideyuki Sato",

year = "2005",

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T1 - Elastic property of Kondo semiconductor CeOs4Sb12

AU - Nakanishi, Yoshiki

AU - Oikawa, Masafumi

AU - Kumagai, Tomoyuki

AU - Yoshizawa, Masahito

AU - Namiki, Takahiro

AU - Sugawara, Hitoshi

AU - Sato, Hideyuki

PY - 2005/4/30

Y1 - 2005/4/30

N2 - Ultrasonic measurement was performed on Kondo semiconductor CeOs 4Sb12 to investigate the elastic property. A distinct elastic softening toward low temperatures was observed in C11, whereas no softening was observed in C44. The obtained results were not explained reasonably based on the crystalline electric field effect, indicating that the softening is ascribed to another origin. Since CeOs4Sb12 is likely to form the narrow quasiparticle band, the coupling between elastic strain and the band may play a crucial role. We discuss the origin of the distinct softening in C11 from the view of this coupling.

AB - Ultrasonic measurement was performed on Kondo semiconductor CeOs 4Sb12 to investigate the elastic property. A distinct elastic softening toward low temperatures was observed in C11, whereas no softening was observed in C44. The obtained results were not explained reasonably based on the crystalline electric field effect, indicating that the softening is ascribed to another origin. Since CeOs4Sb12 is likely to form the narrow quasiparticle band, the coupling between elastic strain and the band may play a crucial role. We discuss the origin of the distinct softening in C11 from the view of this coupling.

KW - Deformation potential approximation

KW - Elastic property

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U2 - 10.1016/j.physb.2005.01.259

DO - 10.1016/j.physb.2005.01.259

M3 - 学術論文

AN - SCOPUS:18144423084

SN - 0921-4526

VL - 359-361

SP - 907

EP - 909

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - SPEC. ISS.

ER -

Elastic property of Kondo semiconductor CeOs4Sb12

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ASJC Scopus 主題領域

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引用スタイル

Elastic property of Kondo semiconductor CeOs₄Sb₁₂