Elastic property of Kondo semiconductor CeOs4Sb12

Yoshiki Nakanishi; Masafumi Oikawa; Tomoyuki Kumagai; Masahito Yoshizawa; Takahiro Namiki; Hitoshi Sugawara; Hideyuki Sato

doi:10.1016/j.physb.2005.01.259

Elastic property of Kondo semiconductor CeOs₄Sb₁₂

Yoshiki Nakanishi^*, Masafumi Oikawa, Tomoyuki Kumagai, Masahito Yoshizawa, Takahiro Namiki, Hitoshi Sugawara, Hideyuki Sato

^*Corresponding author for this work

Materials Design and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Ultrasonic measurement was performed on Kondo semiconductor CeOs ₄Sb₁₂ to investigate the elastic property. A distinct elastic softening toward low temperatures was observed in C11, whereas no softening was observed in C44. The obtained results were not explained reasonably based on the crystalline electric field effect, indicating that the softening is ascribed to another origin. Since CeOs₄Sb₁₂ is likely to form the narrow quasiparticle band, the coupling between elastic strain and the band may play a crucial role. We discuss the origin of the distinct softening in C11 from the view of this coupling.

Original language	English
Pages (from-to)	907-909
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	359-361
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physb.2005.01.259
State	Published - 2005/04/30

Keywords

Deformation potential approximation
Elastic property

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2005.01.259

Cite this

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title = "Elastic property of Kondo semiconductor CeOs4Sb12",

abstract = "Ultrasonic measurement was performed on Kondo semiconductor CeOs 4Sb12 to investigate the elastic property. A distinct elastic softening toward low temperatures was observed in C11, whereas no softening was observed in C44. The obtained results were not explained reasonably based on the crystalline electric field effect, indicating that the softening is ascribed to another origin. Since CeOs4Sb12 is likely to form the narrow quasiparticle band, the coupling between elastic strain and the band may play a crucial role. We discuss the origin of the distinct softening in C11 from the view of this coupling.",

keywords = "Deformation potential approximation, Elastic property",

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AU - Nakanishi, Yoshiki

AU - Oikawa, Masafumi

AU - Kumagai, Tomoyuki

AU - Yoshizawa, Masahito

AU - Namiki, Takahiro

AU - Sugawara, Hitoshi

AU - Sato, Hideyuki

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AB - Ultrasonic measurement was performed on Kondo semiconductor CeOs 4Sb12 to investigate the elastic property. A distinct elastic softening toward low temperatures was observed in C11, whereas no softening was observed in C44. The obtained results were not explained reasonably based on the crystalline electric field effect, indicating that the softening is ascribed to another origin. Since CeOs4Sb12 is likely to form the narrow quasiparticle band, the coupling between elastic strain and the band may play a crucial role. We discuss the origin of the distinct softening in C11 from the view of this coupling.

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