抄録
The heteroepitaxial growth of InSb film via AlSb buffer layer on a Si(111) substrate was performed in an ultra high vacuum. The grown InSb films were characterized by X-ray diffraction and atomic force microscopy. XRD patterns (φ-scan) of the samples showed different epitaxial relationship between InSb/Si and InSb/AlSb/Si. It is found that surface condition has a significant influence on the growth of InSb films and the surface of InSb films became rough due to the high mixture ratio of domains. The two-step growth procedure was also tried to further improve the crystal quality of the InSb films.
| 本文言語 | 英語 |
|---|---|
| ページ（範囲） | 2778-2780 |
| ページ数 | 3 |
| ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 巻 | 5 |
| 号 | 9 |
| DOI | |
| 出版ステータス | 出版済み - 2008 |
| イベント | 34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, 日本 継続期間: 2007/10/15 → 2007/10/18 |
ASJC Scopus 主題領域
- 凝縮系物理学