Abstract
The heteroepitaxial growth of InSb film via AlSb buffer layer on a Si(111) substrate was performed in an ultra high vacuum. The grown InSb films were characterized by X-ray diffraction and atomic force microscopy. XRD patterns (φ-scan) of the samples showed different epitaxial relationship between InSb/Si and InSb/AlSb/Si. It is found that surface condition has a significant influence on the growth of InSb films and the surface of InSb films became rough due to the high mixture ratio of domains. The two-step growth procedure was also tried to further improve the crystal quality of the InSb films.
| Original language | English |
|---|---|
| Pages (from-to) | 2778-2780 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2008 |
| Event | 34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007/10/15 → 2007/10/18 |
ASJC Scopus subject areas
- Condensed Matter Physics