Carrier conduction characteristics in P3HT: PCBM bulk heterojunction structures under sunlight illumination

Yanhui Lou; Zhaokui Wang; Shigeki Naka; Hiroyuki Okada

doi:10.1016/j.phpro.2011.05.041

Carrier conduction characteristics in P3HT: PCBM bulk heterojunction structures under sunlight illumination

Yanhui Lou^*, Zhaokui Wang, Shigeki Naka, Hiroyuki Okada

^*この論文の責任著者

工学科　電気電子工学コース

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

1 被引用数 (Scopus)

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Injection properties of electrons and holes at the interface of electrodes/active layer for blending poly(3-hexylthiophene) (P3HT) and methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) based on structures of Au/MoO₃/P3HT: PCBM/ MoO₃/Au as hole dominated device and Al alloy/P3HT: PCBM/Al alloy as electron dominated device were investigated. Both of hole and electron injections were ascribed to Schottky thermionic emission mechanism. The barrier height of carrier injection was estimated under a simulated air mass (AM) 1.5G spectrum illumination and dark conditions, respectively. The interfacial state at Al alloys/ P3HT: PCBM interface was estimated to be 1.4 × 10¹⁴ states/cm ²/eV under illumination by extrapolating the relation of electron barrier heights and work functions using different Al alloys.

本文言語	英語
ページ（範囲）	204-208
ページ数	5
ジャーナル	Physics Procedia
巻	14
DOI	https://doi.org/10.1016/j.phpro.2011.05.041
出版ステータス	出版済み - 2011
イベント	9th International Conference on Nano-Molecular Electronics, ICNME 2010 - Kobe, 日本継続期間: 2010/12/14 → 2010/12/16

ASJC Scopus 主題領域

物理学および天文学一般

文献へのアクセス

10.1016/j.phpro.2011.05.041

引用スタイル

@article{1cb7442ffb6b450b8f533e5170386800,

title = "Carrier conduction characteristics in P3HT: PCBM bulk heterojunction structures under sunlight illumination",

abstract = "Injection properties of electrons and holes at the interface of electrodes/active layer for blending poly(3-hexylthiophene) (P3HT) and methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) based on structures of Au/MoO3/P3HT: PCBM/ MoO3/Au as hole dominated device and Al alloy/P3HT: PCBM/Al alloy as electron dominated device were investigated. Both of hole and electron injections were ascribed to Schottky thermionic emission mechanism. The barrier height of carrier injection was estimated under a simulated air mass (AM) 1.5G spectrum illumination and dark conditions, respectively. The interfacial state at Al alloys/ P3HT: PCBM interface was estimated to be 1.4 × 1014 states/cm 2/eV under illumination by extrapolating the relation of electron barrier heights and work functions using different Al alloys.",

keywords = "Bulk heterojunction, Carrier injection, Organic solar cells",

author = "Yanhui Lou and Zhaokui Wang and Shigeki Naka and Hiroyuki Okada",

year = "2011",

doi = "10.1016/j.phpro.2011.05.041",

language = "英語",

volume = "14",

pages = "204--208",

journal = "Physics Procedia",

issn = "1875-3884",

publisher = "Elsevier B.V.",

note = "9th International Conference on Nano-Molecular Electronics, ICNME 2010 ; Conference date: 14-12-2010 Through 16-12-2010",

}

TY - JOUR

T1 - Carrier conduction characteristics in P3HT

T2 - 9th International Conference on Nano-Molecular Electronics, ICNME 2010

AU - Lou, Yanhui

AU - Wang, Zhaokui

AU - Naka, Shigeki

AU - Okada, Hiroyuki

PY - 2011

Y1 - 2011

N2 - Injection properties of electrons and holes at the interface of electrodes/active layer for blending poly(3-hexylthiophene) (P3HT) and methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) based on structures of Au/MoO3/P3HT: PCBM/ MoO3/Au as hole dominated device and Al alloy/P3HT: PCBM/Al alloy as electron dominated device were investigated. Both of hole and electron injections were ascribed to Schottky thermionic emission mechanism. The barrier height of carrier injection was estimated under a simulated air mass (AM) 1.5G spectrum illumination and dark conditions, respectively. The interfacial state at Al alloys/ P3HT: PCBM interface was estimated to be 1.4 × 1014 states/cm 2/eV under illumination by extrapolating the relation of electron barrier heights and work functions using different Al alloys.

AB - Injection properties of electrons and holes at the interface of electrodes/active layer for blending poly(3-hexylthiophene) (P3HT) and methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) based on structures of Au/MoO3/P3HT: PCBM/ MoO3/Au as hole dominated device and Al alloy/P3HT: PCBM/Al alloy as electron dominated device were investigated. Both of hole and electron injections were ascribed to Schottky thermionic emission mechanism. The barrier height of carrier injection was estimated under a simulated air mass (AM) 1.5G spectrum illumination and dark conditions, respectively. The interfacial state at Al alloys/ P3HT: PCBM interface was estimated to be 1.4 × 1014 states/cm 2/eV under illumination by extrapolating the relation of electron barrier heights and work functions using different Al alloys.

KW - Bulk heterojunction

KW - Carrier injection

KW - Organic solar cells

UR - http://www.scopus.com/inward/record.url?scp=84863176391&partnerID=8YFLogxK

U2 - 10.1016/j.phpro.2011.05.041

DO - 10.1016/j.phpro.2011.05.041

M3 - 会議記事

AN - SCOPUS:84863176391

SN - 1875-3884

VL - 14

SP - 204

EP - 208

JO - Physics Procedia

JF - Physics Procedia

Y2 - 14 December 2010 through 16 December 2010

ER -

Carrier conduction characteristics in P3HT: PCBM bulk heterojunction structures under sunlight illumination

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