Application of ion beam and electron beam by plasma focus device to material processing

Silicon carbide (SiC) films were grown on the silicon (100) substrate by a 20 kJ Mather-type dense plasma focus device. The preparation method and characteriza- tion data are presented. X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (SEM) and nano-indentor were employed for the characterization of the samples obtained at different axial position of 50mm, 90mm, 130mm and 170mm, respectively. Polycrystalline 3C-SiC were obtained at the position of 90mm and 130mm. SEM image showed that the silicon carbide films obtained at the position of 90 mm are porous on surface layer. Nano-indentor indicates that the film obtained at the position of 130mm has the highest mechanical hardness.