Transparent organic light-emitting diodes with top electrode using ion-plating method

Hironao Sano; Ryota Ishida; Tatsuya Kura; Shunsuke Fujita; Shigeki Naka; Hiroyuki Okada; Takeshi Takai

doi:10.1587/transele.E98.C.1035

Transparent organic light-emitting diodes with top electrode using ion-plating method

Hironao Sano, Ryota Ishida, Tatsuya Kura, Shunsuke Fujita, Shigeki Naka^*, Hiroyuki Okada, Takeshi Takai

^*Corresponding author for this work

Electric and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Transparent organic light-emitting diodes (TOLEDs) were investigated with top electrode of indium-tin-oxide (ITO) by ion-plating method. High deposition rate of 4.4 nm/s was realized without plasma damage of under organic layer. In the TOLEDs with inverted structure, high transmittance of over 75% at 550 nm and bright emission of 1,850 and 1,410 cd/m², from bottom and top side at 163 mA/cm², respectively, were obtained.

Original language	English
Pages (from-to)	1035-1038
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E98C
Issue number	11
DOIs	https://doi.org/10.1587/transele.E98.C.1035
State	Published - 2015/11

Keywords

High deposition rate
Ion-plating
Low temperature deposition
Organic light-emitting diode
Transparent electrode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1587/transele.E98.C.1035

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title = "Transparent organic light-emitting diodes with top electrode using ion-plating method",

abstract = "Transparent organic light-emitting diodes (TOLEDs) were investigated with top electrode of indium-tin-oxide (ITO) by ion-plating method. High deposition rate of 4.4 nm/s was realized without plasma damage of under organic layer. In the TOLEDs with inverted structure, high transmittance of over 75% at 550 nm and bright emission of 1,850 and 1,410 cd/m2, from bottom and top side at 163 mA/cm2, respectively, were obtained.",

keywords = "High deposition rate, Ion-plating, Low temperature deposition, Organic light-emitting diode, Transparent electrode",

author = "Hironao Sano and Ryota Ishida and Tatsuya Kura and Shunsuke Fujita and Shigeki Naka and Hiroyuki Okada and Takeshi Takai",

note = "Publisher Copyright: {\textcopyright} 2015 The Institute of Electronics, Information and Communication Engineers.",

year = "2015",

month = nov,

doi = "10.1587/transele.E98.C.1035",

language = "英語",

volume = "E98C",

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T1 - Transparent organic light-emitting diodes with top electrode using ion-plating method

AU - Sano, Hironao

AU - Ishida, Ryota

AU - Kura, Tatsuya

AU - Fujita, Shunsuke

AU - Naka, Shigeki

AU - Okada, Hiroyuki

AU - Takai, Takeshi

PY - 2015/11

Y1 - 2015/11

N2 - Transparent organic light-emitting diodes (TOLEDs) were investigated with top electrode of indium-tin-oxide (ITO) by ion-plating method. High deposition rate of 4.4 nm/s was realized without plasma damage of under organic layer. In the TOLEDs with inverted structure, high transmittance of over 75% at 550 nm and bright emission of 1,850 and 1,410 cd/m2, from bottom and top side at 163 mA/cm2, respectively, were obtained.

AB - Transparent organic light-emitting diodes (TOLEDs) were investigated with top electrode of indium-tin-oxide (ITO) by ion-plating method. High deposition rate of 4.4 nm/s was realized without plasma damage of under organic layer. In the TOLEDs with inverted structure, high transmittance of over 75% at 550 nm and bright emission of 1,850 and 1,410 cd/m2, from bottom and top side at 163 mA/cm2, respectively, were obtained.

KW - High deposition rate

KW - Ion-plating

KW - Low temperature deposition

KW - Organic light-emitting diode

KW - Transparent electrode

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SN - 0916-8524

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EP - 1038

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 11

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Transparent organic light-emitting diodes with top electrode using ion-plating method

Abstract

Keywords

ASJC Scopus subject areas

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