EXAFS study of semimetal-semiconductor transition of bismuth clusters

H. Ikemoto*, T. Miyanaga, S. Yoshida, J. Sogoh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 -300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 Å and 3.6 Å are attributed to the nearest neighbors within the layer and between layers, respectively. EXAFS functions were analysed by the curve fitting method within a symmetric distribution approximation. The nearest neighbor distance of the 0.5 nm thick films is shorter than that of the 300 nm thick films at all the temperatures, which is related to the reduction of the inter-layer correlation.

Original languageEnglish
Title of host publicationX-RAY ABSORPTION FINE STRUCTURE - XAFS13
Subtitle of host publication13th International Conference
Pages437-439
Number of pages3
DOIs
StatePublished - 2007
EventX-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference - Stanford, CA, United States
Duration: 2006/07/092006/07/14

Publication series

NameAIP Conference Proceedings
Volume882
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceX-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference
Country/TerritoryUnited States
CityStanford, CA
Period2006/07/092006/07/14

Keywords

  • Alkali halides
  • Bismuth
  • Clusters
  • EXAFS
  • Metal-insulator transition

ASJC Scopus subject areas

  • General Physics and Astronomy

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