Theoretical Study of the Growth of a Perfect GaAs Crystal by MLEC method

  • Kobayashi, Nobuyuki (Principal Investigator)
  • 岩城, 敏博 (Co-Investigator(Kenkyū-buntansha))

Project Details

Abstract

2. Temperature distribution and fluid convection in the melt: A computer simulation code to obtaine the temperature and fluid convection under an axial magnetic field is devised. The convection in the melt is suppressed by the magnetic field. There is a possibility that the free convection doninant flow is suppressed and reversed under the crystal by the magnetic field and that the melt is occupied by a forced convection dominant flow caused by crystal rotation There is also a possibility that there exists a marangoni convection caused by a surface tension gradient near the melt-fluid boundaries. The marangoni convections are obtained for various magnetic field strengths and found that the marangoni convection has a similarity as the free convection. Finally, the crucible rotation as well as the magnetic field is also effective to suppress and to two-dimensionalise the convection in the melt.
StatusFinished
Effective start/end date1985/01/011986/12/31

Funding

  • Japan Society for the Promotion of Science: ¥1,900,000.00

Keywords

  • 結晶成長
  • LEC法
  • 引上法
  • 温度分布
  • 熱応力
  • 転位密度
  • 対流
  • マランゴニ対流
  • Crystal Growth
  • Perfect Crystal
  • Czochralski method
  • MLEC method
  • GaAs
  • Convection
  • Heat transfer