Development of new ion implantation technology to semiconductors by using high energy density pulsed ion beam

  • MASUGATA, Katsumi (Principal Investigator)
  • 高橋, 隆一 (Co-Investigator(Kenkyū-buntansha))
  • 村井, 忠邦 (Co-Investigator(Kenkyū-buntansha))

Project Details

Abstract

4.Evaluation of beam irradiation effects
StatusFinished
Effective start/end date2004/01/01 → 2005/12/31

Funding

  • Japan Society for the Promotion of Science: ¥3,700,000.00

Keywords

  • パルスイオン注入
  • パルスイオンビーム
  • 両極性パルス加速器
  • パルス窒素イオンビーム
  • パルスアルミイオンビーム
  • SiC
  • Pulsed Ion Beam Implantation
  • Pulsed Ion Beam
  • Bipolar Pulse Accelerator
  • Pulsed Nitrogen Ion Beam
  • Pulsed Aluminum Ion Beam
  • Silicon Carbide

Access Project

  • 1 Conference contribution

  • Multiple compressions in the middle energy plasma focus device

    Yousefi, H. R., Ejiri, Y., Ito, H. & Masugata, K., 2006/01/15, PLASMA 2005: Int. Conf. PLASMA-2005 on Res. and Applic. of Plasmas; 3rd German-Polish Conf. on Plasma Diagnostics for Fusion Applic.; 5th French-Polish Seminar on Thermal Plasma in Space and Lab.. p. 249-251 3 p. (AIP Conference Proceedings; vol. 812).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations