Stress Analysis of Semiconducting Crystal during Growth

4. Dislocation distribution: The resolved shear stresses in an fcc single crystal are calculated for the <100> and <111> growth directions. The speculated dislocation array patterns are obtained from the resolved shear stresses by using the Penning's conception. The patterns are compared with the experimental ones. We get the following results. (1) The speculated dislocation array patterns agree well with those observed in GaAs and InP crystals. (2) In order to grow a dislocation-free crystal, it is necessary to reduce the thermal and residual stresses. The small Biot number is required for the reduction. (3) It is useful for the small Biot number to use a thick encapsulant and an after heater.