Investigation of mechanism for enhancement on recombination of point deffects at controlled precipitate/matrix interface

It is known that precipitate/matrix interface act as sinks for point defects. However, it have not been clarified the relation between structure and sink efficiency of interfaces. In this study, we observed the several types of interface such as Cr-precipitate in Cu-Cr system, carbide and siliside in austenitic stainless steel by three dimensional atom probe. The results of formation behavior of point defects under irradiation shows that semicoherent precipitate/matrix interface, which have specific orientation relationships act as neutral sinks.