A study on the Evaluation of Crystal Perfection by Means of the Measurement of Static Debye-Waller factors in the Pendellosung Oscillations

  • 杉田, 吉充 (Principal Investigator)
  • 飯田, 敏 (Co-Investigator(Kenkyū-buntansha))

Project Details

Abstract

(5) X-ray topographic observation of GaAs crystals showed that there was a strong interaction between dislocation and impurities or point defects.
StatusFinished
Effective start/end date1988/01/01 → 1989/12/31

Funding

  • Japan Society for the Promotion of Science: ¥7,000,000.00

Keywords

  • 結晶完全性評価
  • 結晶傾斜法
  • ペンデル振動
  • 靜的デバイクラ-因子
  • III・V族化合物半導体
  • シリコン
  • 結晶評価法
  • 静的デバイワラ-因子
  • 半導体結晶材料
  • 静的デバイワラー因子
  • Evaluation of Crystal Perfection
  • Crystal Inclination Method
  • Pendellosung Oscillation
  • Static Debye-Waller Factor
  • III-V Compound Semiconductor
  • Silicon

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