Keyphrases
InSb
100%
Si(111)
84%
Resonant Tunneling Diode
43%
Heteroepitaxial Growth
34%
(001) Substrate
27%
Buffer Layer
26%
Si(111) Substrate
23%
Surface Reconstruction
20%
Delta-sigma Modulation
17%
Surface Phase
14%
AlSb
13%
Resonant Tunneling
12%
Crystal Quality
11%
Heteroepitaxy
11%
Growth Temperature
10%
High Performance
10%
Oscillator Basis
10%
Microphone Sensor
10%
Transmission Line
10%
Aluminum Oxide
10%
Nanoclusters
10%
SiGe
9%
Adsorption
9%
Oscillation Frequency
9%
Delta-sigma Modulator
8%
InGaSb
8%
Heteroepitaxial Structures
8%
GaSb Film
8%
Two-step Growth Method
8%
GaSb
8%
Surface Morphology
8%
Electrical Properties
8%
Flux Ratio
7%
Channel Layer
7%
Two-step Growth
7%
Ge Buffer
7%
Epitaxy
7%
X Ray Diffraction
7%
Harmonic Oscillator
6%
Ultrathin
6%
Higher Harmonics
6%
Super-regenerative
6%
Growth Temperature Effects
6%
Active Transmission
6%
Reflection High-energy Electron Diffraction
6%
Si Substrate
6%
Annealing
6%
Array Structure
5%
Circuit Simulation
5%
Experimental Demonstration
5%
Material Science
Film
93%
Surface (Surface Science)
46%
Buffer Layer
33%
Electronic Circuit
25%
Surface Reconstruction
24%
Resonator
18%
X-Ray Diffraction
14%
Reflection High-Energy Electron Diffraction
12%
Monolayers
11%
Heteroepitaxy
11%
Surface Morphology
10%
Nanoclusters
10%
Thin Films
8%
Lattice Mismatch
8%
Heterojunction
8%
Metal-Oxide-Semiconductor Field-Effect Transistor
7%
Electron Mobility
7%
Epitaxy
7%
Microelectromechanical System
6%
Auger Electron Spectroscopy
6%
Molecular Beam Epitaxy
5%
Density
5%
Engineering
Resonant Tunneling
43%
Oscillator
28%
Surface Phase
17%
Crystal Quality
14%
Electric Lines
13%
Resonator
12%
Metal-Oxide-Semiconductor Field-Effect Transistor
11%
Harmonics
11%
Lattice Mismatch
11%
Channel Layer
10%
Scanning Tunneling Microscopy
9%
Si Substrate
9%
Growth Method
8%
Surface Morphology
8%
Buffer Layer
7%
Growth Condition
7%
Induced Surface
7%
Microelectromechanical System
6%
Substrate Temperature
6%
Monolayers
6%
Quantum Well
6%
Dynamic Range
6%
Digital Signal
5%
Thin Films
5%
Low Growth Rate
5%
Energy Electron Diffraction
5%
Heterojunctions
5%
High Resolution
5%
Phase Noise
5%
