Simultaneous crystallization of both elements in amorphous GeSb and GeAl eutectic alloys

Toshio Okabe*, Sakaru Endo, Shigeru Saito

*この論文の責任著者

研究成果: ジャーナルへの寄稿学術論文査読

16 被引用数 (Scopus)

抄録

Electron microscopic investigations have been carried out on the early stages of crystallization of amorphous eutectic GeSb and GeAl alloys with no intermediate compound. The GeSb and GeAl films, prepared by vacuum coevaporation on the substrates at room temperature, are amorphous for Ge concentrations larger than 0.1 and 0.5, respectively. The crystallization of these films are characterized by simultaneous formation of both constituents in their crystalline forms, adjacent each other with specific orientation relationships: (246)Ge (003)Sb and [032]Ge [110]Sb for GeSb, and (111)Ge (224)Al and [121]Ge [110]Al for GeAl. The crystallization temperature decreases monotoneously with increasing Sb or Al content, and is well fitted to 2 3 values of the liquids temperature in Kelvin in the case of GeSb.

本文言語英語
ページ(範囲)222-225
ページ数4
ジャーナルJournal of Non-Crystalline Solids
117-118
PART 1
DOI
出版ステータス出版済み - 1990/02/01

ASJC Scopus 主題領域

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 凝縮系物理学
  • 材料化学

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