Semiconductor-metal transition in liquid As-Te mixtures

H. Endo*, H. Hoshino, H. Ikemoto, T. Miyanaga

*この論文の責任著者

研究成果: ジャーナルへの寄稿会議記事査読

27 被引用数 (Scopus)

抄録

EXAFS, conductivity and Hall coefficient measurements have been carried out for liquid As-Te mixtures. EXAFS analysis reveals the presence of chemical disorder marked by the existence of homopolar As-As and Te-Te pairs. At high temperature around 500 °C the network structure composed of threefold coordinated As atoms and twofold coordinated Te atoms is transformed into the twofold chain structure. The network-chain transformation is accompanied by the gradual semiconductor to metal transition which is demonstrated by the results for conductivity and Hall coefficient. The microscopic origin of the semiconductor to metal transition is discussed in connection with the structural modification.

本文言語英語
ページ(範囲)6077-6099
ページ数23
ジャーナルJournal of Physics Condensed Matter
12
28
DOI
出版ステータス出版済み - 2000/07/17
イベントThe 1999 Adriatico Research Conference - Trieste, Italy
継続期間: 1999/06/281999/07/02

ASJC Scopus 主題領域

  • 材料科学一般
  • 凝縮系物理学

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