抄録
We have studied the electronic structures of CeRu2 (Si1 - x Gex)2 single crystals, whose ground state changes from paramagnetic state to antiferromagnetic state with increasing Ge concentration across the quantum critical point, via the dHvA effect. It has been reported that the effective masses of the up and down spin conduction electrons in CeRu2 Si2 are considerably different, although their Fermi surfaces are nearly the same. Such anomalous conduction electron state is found to exist above the metamagnetic transition fields in both the samples of the paramagnetic and antiferromagnetic ground state.
本文言語 | 英語 |
---|---|
ページ(範囲) | 331-333 |
ページ数 | 3 |
ジャーナル | Journal of Magnetism and Magnetic Materials |
巻 | 310 |
号 | 2 SUPPL. PART 1 |
DOI | |
出版ステータス | 出版済み - 2007/03 |
ASJC Scopus 主題領域
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学