TY - JOUR
T1 - High-temperature growth of heteroepitaxial InSb films on Si(1 1 1) substrate via the InSb bi-layer
AU - Mori, M.
AU - Saito, M.
AU - Nagashima, K.
AU - Ueda, K.
AU - Yoshida, T.
AU - Maezawa, K.
N1 - Funding Information:
A part of this work has been supported by a Grant-in-Aid Scientific Research (19760233, 19569003) of the Ministry of Education, Culture, Sports, Science and Technology, Japan, and Hitachi Kokusai Electric Inc., Japan.
PY - 2009/3/15
Y1 - 2009/3/15
N2 - To achieve the high-temperature growth of heteroepitaxial InSb films on the InSb bi-layer, we studied the influence of substrate temperature of first layer deposition (Ts1) on the two-step growth procedure. Although the growth at higher Ts1 of 240 and 280 °C is difficult to achieve using the usual procedure due to the desorption of In atoms from the InSb bi-layer, it can be realized by means of the adsorption of excess Sb atoms onto an initial InSb bi-layer prepared via √7×√3-In surface reconstruction. The high-temperature growth of 30°-rotated InSb films at 420 °C was demonstrated on a Si(1 1 1) substrate with a InSb bi-layer. The electron mobility of the InSb film grown at 420 °C was about 20,000 cm2/V s at RT.
AB - To achieve the high-temperature growth of heteroepitaxial InSb films on the InSb bi-layer, we studied the influence of substrate temperature of first layer deposition (Ts1) on the two-step growth procedure. Although the growth at higher Ts1 of 240 and 280 °C is difficult to achieve using the usual procedure due to the desorption of In atoms from the InSb bi-layer, it can be realized by means of the adsorption of excess Sb atoms onto an initial InSb bi-layer prepared via √7×√3-In surface reconstruction. The high-temperature growth of 30°-rotated InSb films at 420 °C was demonstrated on a Si(1 1 1) substrate with a InSb bi-layer. The electron mobility of the InSb film grown at 420 °C was about 20,000 cm2/V s at RT.
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting materials
UR - http://www.scopus.com/inward/record.url?scp=63349092138&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2008.10.043
DO - 10.1016/j.jcrysgro.2008.10.043
M3 - 学術論文
AN - SCOPUS:63349092138
SN - 0022-0248
VL - 311
SP - 1692
EP - 1695
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 7
ER -