Growth temperature effect on the heteroepitaxy of InSb films on a Si(001) substrate covered with Ge islands

Keyphrases

• (001) Substrate 100%
• Ge Islands 100%
• Growth Temperature 22%
• Growth Temperature Effects 100%
• Heteroepitaxial Growth 11%
• Heteroepitaxy 100%
• InSb 100%
• Intensity Ratio 11%
• Molecular Beam Epitaxy 11%
• One-step Growth 22%
• Optical Microscope 11%
• Reflection High-energy Electron Diffraction 11%
• Si(111) 100%
• Substrate Temperature 11%
• Surface Morphology 22%
• Two-step Growth 33%
• X Ray Diffraction 11%
• X-ray Diffraction Intensity 11%
• X-ray Diffraction Pattern 11%

Material Science

• Diffraction Pattern 25%
• Film 100%
• Heteroepitaxy 100%
• Molecular Beam Epitaxy 25%
• Monolayers 25%
• Reflection High-Energy Electron Diffraction 25%
• Surface Morphology 50%
• X-Ray Diffraction 75%