Fabrication of field-effect transistor devices with new type of fullerodendron

Yuuki Sako; Yutaka Takaguchi; Yu Kusai; Nagano Takayuki; Kubozono Yoshihiro

Fabrication of field-effect transistor devices with new type of fullerodendron

Yuuki Sako^*, Yutaka Takaguchi, Yu Kusai, Nagano Takayuki, Kubozono Yoshihiro

^*この論文の責任著者

材料デザイン工学科

研究成果: 会議への寄与 › 学会論文 › 査読

抄録

New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO₂/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10^-3 cm² V^-1 s^-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C₆₀ moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.

本文言語	英語
ページ	1375
ページ数	1
出版ステータス	出版済み - 2006
イベント	55th SPSJ Annual Meeting - Nagoya, 日本継続期間: 2006/05/24 → 2006/05/26

学会

学会	55th SPSJ Annual Meeting
国/地域	日本
City	Nagoya
Period	2006/05/24 → 2006/05/26

ASJC Scopus 主題領域

工学一般

引用スタイル

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title = "Fabrication of field-effect transistor devices with new type of fullerodendron",

abstract = "New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.",

keywords = "C60, Field effect transistor, Fullerodendron, Organic semiconductor",

author = "Yuuki Sako and Yutaka Takaguchi and Yu Kusai and Nagano Takayuki and Kubozono Yoshihiro",

year = "2006",

language = "英語",

pages = "1375",

note = "55th SPSJ Annual Meeting ; Conference date: 24-05-2006 Through 26-05-2006",

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TY - CONF

T1 - Fabrication of field-effect transistor devices with new type of fullerodendron

AU - Sako, Yuuki

AU - Takaguchi, Yutaka

AU - Kusai, Yu

AU - Takayuki, Nagano

AU - Yoshihiro, Kubozono

PY - 2006

Y1 - 2006

N2 - New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.

AB - New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.

KW - C60

KW - Field effect transistor

KW - Fullerodendron

KW - Organic semiconductor

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M3 - 学会論文

AN - SCOPUS:33749824426

SP - 1375

T2 - 55th SPSJ Annual Meeting

Y2 - 24 May 2006 through 26 May 2006

ER -

Fabrication of field-effect transistor devices with new type of fullerodendron

抄録

学会

ASJC Scopus 主題領域

フィンガープリント

引用スタイル