Extent and feature of lattice distortions around Ga impurity atoms in InSb single crystal

S. Hosokawa*, N. Happo, T. Ozaki, H. Ikemoto, T. Shishido, K. Hayashi

*この論文の責任著者

研究成果: ジャーナルへの寄稿学術論文査読

40 被引用数 (Scopus)

抄録

To clarify lattice distortions induced by adding Ga atoms in the InSb crystal, Ga Kα x-ray fluorescence holography (XFH) experiments were carried out on an In0.995Ga0.005Sb diluted mixed single crystal, and three-dimensional atomic images around the Ga atoms were reconstructed. Although the atomic images are located almost at ideal positions of the InSb crystal, some differences can be observed for only the first- and second-neighboring atoms. By combining them with x-ray absorption fine structure data, large spatial fluctuations of the first-neighboring atoms appear in the angular direction, which can be clarified from the present XFH results. From the XFH results, it is concluded that lattice distortions are limited within the second neighbors in this diluted mixed crystal, in contrast to five chemical bonds in a heavily doped mixed crystal of Zn0.4Mn0.6Te reported previously.

本文言語英語
論文番号094104
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
87
9
DOI
出版ステータス出版済み - 2013/03/08

ASJC Scopus 主題領域

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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