TY - JOUR
T1 - Electronic and structural changes in the supercooled liquid and glassy As2Se3
AU - Hoshino, Hideoki
AU - Yamamoto, Itsuro
AU - Miyanaga, Takafumi
AU - Ikemoto, Hiroyuki
AU - Endo, Hirohisa
PY - 1999/8/1
Y1 - 1999/8/1
N2 - We have measured extended X-ray absorption fine structure (EXAFS) and dc conductivity σ of the liquid and glassy As2Se3. Each |F(r)|, the magnitude of the Fourier transform of EXAFS oscillations around As and Se atoms, has a symmetric peak around 2.5 angstroms. The curve fitting analysis indicates the presence of chemical order and no homopolar As-As and Se-Se bonds. When liquid As2Se3 is cooled to the glassy state through the supercooled state, the inter-layer correlation increases and the two-dimensional (2D) As2Se3 network structure transforms to a three-dimensional (3D) one. This transformation is the reason for the change in the temperature variation of the coordination number N around 300 °C whose temperature is higher than Tg( = 181 °C). The change in the slope of log σ versus 1/T around 300 °C is assumed to be associated with the appearance of broadened and localized charged defect states near the band tail.
AB - We have measured extended X-ray absorption fine structure (EXAFS) and dc conductivity σ of the liquid and glassy As2Se3. Each |F(r)|, the magnitude of the Fourier transform of EXAFS oscillations around As and Se atoms, has a symmetric peak around 2.5 angstroms. The curve fitting analysis indicates the presence of chemical order and no homopolar As-As and Se-Se bonds. When liquid As2Se3 is cooled to the glassy state through the supercooled state, the inter-layer correlation increases and the two-dimensional (2D) As2Se3 network structure transforms to a three-dimensional (3D) one. This transformation is the reason for the change in the temperature variation of the coordination number N around 300 °C whose temperature is higher than Tg( = 181 °C). The change in the slope of log σ versus 1/T around 300 °C is assumed to be associated with the appearance of broadened and localized charged defect states near the band tail.
UR - http://www.scopus.com/inward/record.url?scp=0345073239&partnerID=8YFLogxK
U2 - 10.1016/S0022-3093(99)00295-1
DO - 10.1016/S0022-3093(99)00295-1
M3 - 会議記事
AN - SCOPUS:0345073239
SN - 0022-3093
VL - 250-252 (II)
SP - 478
EP - 482
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
T2 - Proceedings of the 1998 10th International Conference on Liquid and Amorphous Metals (LAM-10)
Y2 - 30 August 1998 through 4 September 1998
ER -