@inproceedings{d4fdc7ae134c43f4ad76a6d6c9b5284f,
title = "Electrical characterization of n+-InSb/p-Si heterojunctions grwon by surface reconstruction controlled epitaxy",
abstract = "This paper discusses the characteristics of the InSb/Si heterojunctions. Thin epitaxial layers of the InSb were grown on p-Si substrate by using the surface reconstruction controlled epitaxy. This epitaxial growth technique permits us to grow high quality InSb on Si (111) surface. The n-InSb/p-Si heterojunction pn diodes were fabricated with these samples, and characterized by current-voltage, and capacitance-voltage measurements. The conduction and valence band discontinuities were estimated from these results, and they were discussed compared to those obtained from the electron affinity rule.",
keywords = "InSb, Si, conduction band discontinuity, heterojunction, valence band discontinuity",
author = "K. Kimura and K. Hosotani and T. Ito and H. Shimoyama and T. Sakamoto and M. Mori and K. Maezawa",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014 ; Conference date: 19-06-2014 Through 20-06-2014",
year = "2014",
month = jul,
day = "28",
doi = "10.1109/IMFEDK.2014.6867066",
language = "英語",
series = "IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai",
}