Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

Yutaka Ohno; Takeshi Nakao; Shigeru Kishimoto; Koichi Maezawa; Takashi Mizutani

doi:10.1063/1.1687983

Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

Yutaka Ohno^*, Takeshi Nakao, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani

^*この論文の責任著者

工学科　電気電子工学コース

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

132 被引用数 (Scopus)

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The mechanism of off-state breakdown and the effect of Si₃N ₄ surface passivation on breakdown of AlGaN/GaN high electron mobility transistors (HEMT) was analyzed. It was found that the impact ionization in the channel is responsible for the off-state breakdown. Surface passivation by Si₃N₄ film improved the off-state breakdown voltage. This improvement in the off-state breakdown voltage was a result of a change in the potential distribution due to suppression of electron trapping at the surface states.

本文言語	英語
ページ（範囲）	2184-2186
ページ数	3
ジャーナル	Applied Physics Letters
巻	84
号	12
DOI	https://doi.org/10.1063/1.1687983
出版ステータス	出版済み - 2004/03/22

ASJC Scopus 主題領域

物理学および天文学（その他）

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10.1063/1.1687983

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@article{2e2490fbbc4349498dd3c19bcb4a09ba,

title = "Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors",

abstract = "The mechanism of off-state breakdown and the effect of Si3N 4 surface passivation on breakdown of AlGaN/GaN high electron mobility transistors (HEMT) was analyzed. It was found that the impact ionization in the channel is responsible for the off-state breakdown. Surface passivation by Si3N4 film improved the off-state breakdown voltage. This improvement in the off-state breakdown voltage was a result of a change in the potential distribution due to suppression of electron trapping at the surface states.",

author = "Yutaka Ohno and Takeshi Nakao and Shigeru Kishimoto and Koichi Maezawa and Takashi Mizutani",

year = "2004",

month = mar,

day = "22",

doi = "10.1063/1.1687983",

language = "英語",

volume = "84",

pages = "2184--2186",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

AU - Ohno, Yutaka

AU - Nakao, Takeshi

AU - Kishimoto, Shigeru

AU - Maezawa, Koichi

AU - Mizutani, Takashi

PY - 2004/3/22

Y1 - 2004/3/22

N2 - The mechanism of off-state breakdown and the effect of Si3N 4 surface passivation on breakdown of AlGaN/GaN high electron mobility transistors (HEMT) was analyzed. It was found that the impact ionization in the channel is responsible for the off-state breakdown. Surface passivation by Si3N4 film improved the off-state breakdown voltage. This improvement in the off-state breakdown voltage was a result of a change in the potential distribution due to suppression of electron trapping at the surface states.

AB - The mechanism of off-state breakdown and the effect of Si3N 4 surface passivation on breakdown of AlGaN/GaN high electron mobility transistors (HEMT) was analyzed. It was found that the impact ionization in the channel is responsible for the off-state breakdown. Surface passivation by Si3N4 film improved the off-state breakdown voltage. This improvement in the off-state breakdown voltage was a result of a change in the potential distribution due to suppression of electron trapping at the surface states.

UR - http://www.scopus.com/inward/record.url?scp=1942540693&partnerID=8YFLogxK

U2 - 10.1063/1.1687983

DO - 10.1063/1.1687983

M3 - 学術論文

AN - SCOPUS:1942540693

SN - 0003-6951

VL - 84

SP - 2184

EP - 2186

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

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